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MAPLE preparation and characterization of benzil thin films

M. SOCOL1,* , G. SOCOL2, O. RASOGA1,3, F. STANCULESCU3, A. STANCULESCU1, I. MIHAILESCU2, I. IONITA3, N. PREDA1, M. ENCULESCU1, S. ANTOHE3

Affiliation

  1. National Institute of Materials Physics, 105 bis Atomistilor Street, P.O. Box MG-7, Bucharest-Magurele, 077125, Romania
  2. National Institute for Laser, Plasma and Radiation Physics, Str. Atomistilor, Nr. 409, PO Box MG-36, Bucharest-Magurele, 077125, Romania
  3. University of Bucharest, Faculty of Physics, 405 Atomistilor Street, P.O. Box MG-11, Bucharest-Magurele 077125, Romania

Abstract

In this study the Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique was used to prepare thin films from a low melting point (< 100 oC) organic compound (benzil). Optical properties of the films have been investigated by UV-VIS, FTIR and PL spectroscopy. Details about crystallinity were obtained by XRD measurements. FTIR spectra have confirmed the preservation of the chemical structure of the compound during the deposition process. SEM and AFM investigation have evidenced a topography of the MAPLE deposited films characterized by different grain size depending on the deposition conditions. Second harmonic generation measurements have revealed that the MAPLE deposited benzil films have preserved the optical nonliniar properties of the bulk crystalline benzil.

Keywords

Organic material, Optical nonlinear, Low temperature, MAPLE technique.

Citation

M. SOCOL, G. SOCOL, O. RASOGA, F. STANCULESCU, A. STANCULESCU, I. MIHAILESCU, I. IONITA, N. PREDA, M. ENCULESCU, S. ANTOHE, MAPLE preparation and characterization of benzil thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 11, November 2010, pp.1802-1806 (2010).

Submitted at: Oct. 12, 2010

Accepted at: Nov. 10, 2010