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In this study, we investigate the geometrical potential and magnetic field effects on electronic properties of AlN/GaN Constant Total Effective Radius Multi-Wells Quantum Rings (RETC-MWQRs) and Constant Total Effective Radius Multi-Wells Quantum Dots (CTER-MWQDs) including an on-center donor impurity. We have seen that, the magnetic field effect on ground state energy of single-well CTER-MWQDs is more remarkable than other energy levels. Systems with larger inner quantum rings (or dot) radiuses (Rin) undertake more changes in ground state energy by increasing the number of wells. We have also shown that for systems with larger Rin, the ground state energy increases more rapidly when the magnetic field increases. For single-well CTER-MWQRs the ground state wave function is localized within the center of the quantum well. At low magnetic fields, maximum probability of finding the electron occurs in the central quantum well while at high magnetic fields the maximum probability occurs at the well which is nearer to the center of the quantum dot (or ring). By increasing the magnetic field, we have stronger localization. The final fact is that, by means of the number of wells, quantum dot (or ring) radiuses and magnetic field, we can control the localization of the ground state wave function (i.e. the free carrier distribution) within our quantum structure and at the same time alter the electronic properties..
Constant total effective radius multi-wells quantum rings, Subband energies, Ground state wave function, Oscillator strength, Magnetic field, On-center donor impurity.
M. SOLAIMANI, Magnetic field effects on electronic properties of multi-wells quantum rings and dots with an on-center donor impurity, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.595-602 (2018).
Submitted at: Nov. 22, 2017
Accepted at: Oct. 10, 2018