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SUNIL KUMAR1,* , NIDHI SHARMA1, N. K.VERMA1, S. K. CHAKARVARTI2
As one of the most important II-VI compound semiconductors with a direct wide band gap, zinc selenide (ZnSe, bulk crystal Eg = 2.7 eV at 300K) exhibits a great potential for various applications. ZnSe doped nanoparticles has been fabricated using chemical precipitation method and steric hindrance is given by polyvinylpyrrolidone. The size and morphology of the nanostructures is determined by the XRD, TEM and SAED. Laser induced photoluminescence studies were also conducted to study various optical parameters like excited state lifetime, emission wavelength and trap-depths of these chalcogenide nanostructures. ZnSe nanostructures show weak electric dipole visible transitions due to the perturbations of added dopants. These type of nanomaterials exhibit fundamentally unique properties with great potential of bringing plethora of next generation technologies in electronics, computing, optics, biotechnology, medical imaging, medicine, drug delivery, structural materials, aerospace, energy etc.
Nanostructures, Photoluminescence, Electric dipole, Excited State lifetime, Zn Se, PVP.
SUNIL KUMAR, NIDHI SHARMA, N. K.VERMA, S. K. CHAKARVARTI, Luminescent nanoparticles of doped ZnSe passivated by PVP, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.677-682 (2007).
Submitted at: Nov. 12, 2007
Accepted at: Nov. 27, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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