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Low-temperature growth mechanism of Silicon 1-D structure

MOHAMMADREZA SAEIDI1,*

Affiliation

  1. Department of Physics, Faculty of Basic Sciences, Shahed University, Tehran, Iran

Abstract

A novel model is presented to explain the low-temperature growth mechanism of silicon nanotube (SiNT) in catalytic chemical vapor deposition. The developed model is based on kinetic theory of gases and phonon vibrations of SiNT on catalyst and is in agreement with reported experimental works. Simulations demonstrate that the SiNT can grow more than 5m and growth is saturated at a certain time. Also investigations show the existence of an optimum temperature and an optimum catalyst for growth process. Finally, effect of the partial pressure of decomposed feedstock gas on the SiNT growth is presented..

Keywords

Silicon nanotube, Catalytic chemical vapor deposition, Physical modeling, Kinetic theory, Lennard-Jones potential.

Citation

MOHAMMADREZA SAEIDI, Low-temperature growth mechanism of Silicon 1-D structure, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.740-743 (2016).

Submitted at: Jan. 11, 2016

Accepted at: Sept. 29, 2016