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R. A. ISMAIL1,* , K. A. HUBEATIR2, N. H. KALIF2
In the present work, the feasibility of formation near-ideal ohmic contact of In/n-Si by 300 μs duration Nd:YAG pulsed laser processing has been demonstrated. Several laser pulses energy densities have been used. Topography of the irradiated region with different conditions was extensively discussed to support other measurements to evaluate the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with published results, it is found that these results are competitive and meet the standards of good ohmic contact, specific contact resistance of 1.9 x 10-4 Ω.cm2 has been obtained at 21.1 J.cm-2 laser energy density, which is the lowest value ever reported for In/n-Si.
n-Si, YAG:Nd laser, Ohmic contact, Indium, I-V characteristics.
R. A. ISMAIL, K. A. HUBEATIR, N. H. KALIF, Low resistance nonalloyed In ohmic contacts to n-Si irradiated by Nd: YAG laser pulses, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.818-821 (2008).
Submitted at: Oct. 13, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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