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Low-pressure preparation of Eu-Doped (Sr/Ca)AlSiN3 with Li3N flux and its thermal quenching properties

QIUYUE WANG1, YAN DONG2,* , QIYUE SHAO2, XIAOMING TENG3, JIANQING JIANG2

Affiliation

  1. Jiangsu Maritime Institute Gezhi Road , Nanjing , China
  2. School of Materials Science and Engineering, Southeast University, Jiyin Road , Nanjing , China
  3. Jiangsu Bree Optronics Co., Ltd., Liquan Road, Nanjing , China

Abstract

Nitride/nitrogen oxides are widely used in the phosphor converted white light emitting diodes (w LEDs as the orange red phosphor to improve the color rendering index. Recently, several oxides and oxygen free nitride phosphors are being investigated for w LEDs. Due to the high luminous efficacy, excell ent thermal and chemical stability and broad absorption range, from UV to the green region of the electromagnetic spectrum, (Sr/Ca)AlSiN 3 Eu 2+ are considered as one of the most promising red phosphors for w LEDs applications However, the harsh synthesis conditions such as high pressure (190 MPa) and high temperature (1900 ℃℃) hinder the application of (Sr/Ca)AlSiN 3 Eu 2+ in commercial devices and research activities. We demonstrate the utilization of Li 3 N f lux to decrease the synthesis temperature and impro ve the crystal structure of resulting compound. The Sr 1 x Ca x AlSiN 3 Eu 2+ compound has been successfully synthesized by the addition of Li 3 N flux . The synthesis temperature was reduced to 1700 and reaction was carried out at lower pressure ( 0.12 MPa )). The crystal structure, surface morphology and detailed photoluminescence characterization have been carried out and effect of Li3N content along with other parameters has been studied. In addition, thermal quenching properties of Sr 1 x Ca x AlSiN 3 Eu 2+ are also discussed.

Keywords

(Sr/Ca)AlSiN 3 Eu 2+ w LEDs N itride phosphors , L ow pressure T hermal quenching.

Citation

QIUYUE WANG, YAN DONG, QIYUE SHAO, XIAOMING TENG, JIANQING JIANG, Low-pressure preparation of Eu-Doped (Sr/Ca)AlSiN3 with Li3N flux and its thermal quenching properties, Optoelectronics and Advanced Materials - Rapid Communications, 12, 1-2, January-February 2018, pp.95-99 (2018).

Submitted at: Aug. 24, 2016

Accepted at: Feb. 12, 2018