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A. RAMZY1,* , K. OMAR1, Z. HASSAN1, H. ABU HASSAN1
Porous silicon (Si) structure has been produced by photoelectrochemical etching process, which shows strong room temperature luminescence in the red region. The properties of the nanostructures from three etched samples are presented. The etching mechanism has been investigated and it is found to produce different nanostructures for different illumination sittings. It has been observed that the etching process starts under S-band photon. The formation of defects in porous Si etched samples before and after laser irradiation has been studied by scanning electron microscope (SEM). The morphology studies showed the effect of laser power on the porous Si which indicated that the structure has been destroyed and no more optical and electrical properties could be achieved from these due to this effect. This mechanism has been confirmed by X-ray diffraction (XRD) results.
Laser effect, Porous silicon, Nd:YAG laser.
A. RAMZY, K. OMAR, Z. HASSAN, H. ABU HASSAN, Laser effects on porous silicon synthesis by photoelectrochemical etching process, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1190-1194 (2009).
Submitted at: Sept. 20, 2009
Accepted at: Oct. 29, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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