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LAN SHANGPING1, JIA HONGZHI1,* , JIANG DAOPING1, LU HUANCAI1
SnO2/SiO2 (90%mol SnO2) thin film was prepared on the silica substrate by sol-gel method. The SnO2/SiO2 thin film was irradiated by xenon lamp. Then the transmission spectra of the sample were measured. The refractive-index expressions were figured out for irradiated and non-irradiated SnO2/SiO2 thin film, respectively. According to refractive index curves, the refractive index change between irradiated and non-irradiated thin film was approximately up to 0.05..
Photosensitivity, SnO2/SiO2 thin film, Refractive index, Transmission spectrum.
LAN SHANGPING, JIA HONGZHI, JIANG DAOPING, LU HUANCAI, Large photosensitivity in SnO2/SiO2 thin film fabricated by sol-gel method, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.288-291 (2012).
Submitted at: Nov. 13, 2011
Accepted at: Feb. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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