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S. S. TNEH1,* , Z. HASSAN1, K. G. SAW2, F. K. YAM1, K. P. BEH1, H. ABU HASSAN1
We have reported on the non-annealed Al Ohmic contacts on unintentionally doped n-ZnO synthesized using the “bottomup” growth method. The roughness morphology of the ZnO layer was investigated. Current-voltage characteristic of Al contacts on ZnO layer and its chemical composition were also investigated. The resistivity of Al contacts on ZnO decreases with O/Zn ratio. One possible reason is the Al atoms in-diffused into ZnO surface to form a thin layer of Al2O3.
ZnO, Thin films, Ohmic contacts, Electrical properties, Resistivity.
S. S. TNEH, Z. HASSAN, K. G. SAW, F. K. YAM, K. P. BEH, H. ABU HASSAN, Investigation of non-annealed Al ohmic contacts on undoped ZnO synthesized using the “bottom-up” growth method, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.965-967 (2010).
Submitted at: June 8, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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