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R. QINDEEL1,* , K. T. CHAUDHARY1, K. A. BHATTI2, M. S. HUSSAIN1, JALIL ALI1, SAKTIOTO1,3
Effect of temperature on the deposition of Carbon thin is reported in paper. KrF Excimer laser (248 nm, 13-50 mJ and 20 ns) is focused at an angle of 45° on pure graphite target. Silicon (111) wafer, as a substrate is placed at distance of 15 mm from the target surface. The carbon thin films have been deposited at temperatures 20°C and 300°C. 10,000 pulses of KrF laser are irradiated to deposit each film under a vacuum ~ 10-4 Torr. Surface morphology is investigated by analyzing micrographs of Atomic Force Microscope (AFM). X-Ray Diffraction (XRD) and Fourier Infrared Transformation Spectroscopy (FTIR) techniques are employed for the structure analysis and to study nature of bonding of deposited thin films at different temperatures. Results obtained from techniques AFM, XRD and FTIR support each other and explain the effect of substrate temperature on carbon thin films deposited by Pulsed Laser Deposition (PLD) method.
Pulsed laser deposition, Diamond like Carbon, AFM, FTIR, XRD, Carbon plasma.
R. QINDEEL, K. T. CHAUDHARY, K. A. BHATTI, M. S. HUSSAIN, JALIL ALI, SAKTIOTO, Investigation of Carbon thin films by pulsed laser deposition at different temperatures, Optoelectronics and Advanced Materials - Rapid Communications, 4, 11, November 2010, pp.1728-1732 (2010).
Submitted at: Sept. 22, 2010
Accepted at: Nov. 10, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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