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Integration of PIN diode switching circuit with Butler Matrix for 2.45 GHz frequency band

WAN HASBULLAH WAN MOHAMED1, SHARUL KAMAL ABDUL RAHIM1, THAREK ABD RAHMAN1, KIM GEOK TAN2, AHMED WASIF REZA3,*

Affiliation

  1. Fakulti Kejuruteraan Elektrik, Universiti Teknologi Malaysia, 81310 UTM Skudai, Malaysia
  2. Faculty of Engineering & Technology, Multimedia University, Jalan Ayer Keroh Lama, Bukit Beruang, 75450 Melaka, Malaysia
  3. Faculty of Engineering, Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia

Abstract

This study has integrated PIN diode switching circuit with the smart antenna of 4×4 Butler Matrix and successfully designed a novel system. A 76 mm×130 mm×1.67 mm switching circuit is fabricated in this study. It is found that the switching circuit can perform better at Industrial, Scientific, and Medical (ISM) frequency of 2.45 GHz with the superior return loss of -33.98 dB. In order to test the switching circuit that operates properly with the Butler Matrix, the radiating pattern of each output of the integrated PIN diode switching circuit as well as Butler Matrix has been simulated. The obtained results show satisfactory performance and good agreement with the simulated results..

Keywords

PIN diode, Switching circuit, Butler Matrix, Functional and smart material, Smart antenna, Optoelectronic.

Citation

WAN HASBULLAH WAN MOHAMED, SHARUL KAMAL ABDUL RAHIM, THAREK ABD RAHMAN, KIM GEOK TAN, AHMED WASIF REZA, Integration of PIN diode switching circuit with Butler Matrix for 2.45 GHz frequency band, Optoelectronics and Advanced Materials - Rapid Communications, 5, 7, July 2011, pp.793-798 (2011).

Submitted at: March 28, 2011

Accepted at: July 25, 2011