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Influence of thickness on the structural, optical and electrical properties of CuInSe2 absorbing layer for photovoltaic applications

XIN JI1,* , YIMING MI1, ZHI YAN2, CHAO MIN ZHANG1

Affiliation

  1. College of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, China
  2. College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China

Abstract

Solar cell absorbing layer based on CuInSe2 films were successfully deposited by magnetron RF-sputtering with different film thicknesses (300, 450, 600, 750 and 1100 nm). The effect of film thickness on the film structures, morphologies and properties was investigated in detail. The results show that the increase of film thickness is in favor to be constituted in a chalcopyrite structure with a preferential orientation of (112), (220) and (204) diffraction planes. The morphologies results implied the films become rougher and the grain size increase when film thickness increased from 300 nm to 1100 nm. Furthermore, it is indicated that 1100 nm is the best film thickness in electrical and optical properties in the all samples..

Keywords

Thin film, CuInSe2, Film thickness, Vapor deposition, Optical properties.

Citation

XIN JI, YIMING MI, ZHI YAN, CHAO MIN ZHANG, Influence of thickness on the structural, optical and electrical properties of CuInSe2 absorbing layer for photovoltaic applications, Optoelectronics and Advanced Materials - Rapid Communications, 6, 3-4, March-April 2012, pp.483-486 (2012).

Submitted at: Jan. 19, 2012

Accepted at: April 11, 2012