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L. BRAIC1,* , N. C. ZOITA1
Indium nitride is an attractive semiconductor material for optoelectronic applications, high-speed electronics and solar cells. We report successful deposition of polycrystalline InN thin films onto un-etched plain (100) Si substrates by reactive RF magnetron sputtering method. The crystallographic characterization data and band-gap values are presented in relation with the films' growth temperature and deposition time.
Indium nitride, Growth temperature, Crystalline structure, Band-gap, RF-magnetron sputtering.
L. BRAIC, N. C. ZOITA, Influence of the deposition time and temperature on the texture of InN thin films grown by RF-magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2013-2017 (2010).
Submitted at: Nov. 22, 2010
Accepted at: Nov. 29, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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