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Influence of temperature and internal electric field on light emission in wurtzite GaN/AlGaN nanowire heterostructures

M. ZHANG1,* , J. J. SHI2

Affiliation

  1. College of Physics and Electron Information, Inner Mongolia Normal University, Hohhot 010022, People's Republic of China
  2. State Key Laboratory for Mesoscopic Physics, and Department of Physics, Peking University, Beijing 100871, People's Republic of China

Abstract

Within the framework of the effective-mass approximation, the influence of the temperature and the internal electric field on the confined exciton energy shift in [0001]-oriented GaN/AlGaN strained wurtzite nanowire heterostructures is investigated by using the variational approach, in which the important dielectric mismatch is considered. Our results show that the temperature, the strong built-in electric field and the quantum dot (QD) geometrical parameter have a significant influence on the luminescent characteristics of the exciton states. The emission wavelength has a red-shift if the temperature (QD height or the nanowire diameter) increases. Our calculations also indicate that the exciton oscillator strength decreases quickly with increasing of the QD height and temperature..

Keywords

GaN/AlGaN strained nanowire heterostructure, Temperature, Exciton, Optical property.

Citation

M. ZHANG, J. J. SHI, Influence of temperature and internal electric field on light emission in wurtzite GaN/AlGaN nanowire heterostructures, Optoelectronics and Advanced Materials - Rapid Communications, 11, 1-2, January-February 2017, pp.36-41 (2017).

Submitted at: June 24, 2016

Accepted at: Feb. 10, 2017