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Influence of GaAs/AlGaAs heterojunction on the photoemission properties of GaAs photocathode: a first-principles research

XIAOHUA YU1,2,* , ZUDE JIN1, HUIXIA SUN1

Affiliation

  1. Department of Physics and Electronic Engineering, Yuncheng University, Yuncheng 044000, China
  2. Laboratory of Optoelectronic Information Science and Technology of Shanxi Province, Yuncheng 044000, China

Abstract

The electronic structure and optical properties of GaAs/Al0.4Ga0.6As and GaAs/AlAs are studied by the first-principles method. The influence of heterojunction on GaAs photocathode is analyzed. Results show that the stability of heterojunction is lower than pure GaAs. The band bending at the interface is favorable for the flow of carriers toward the emitter layer. Electronic state localization is improved in heterojunction. The photon excitation energy region is located at 1.424~4.732 eV, in this region, the absorption coefficient of heterojunction is lower while the reflectivity of which is higher. The influence of GaAs/AlAs on photocathode is more obvious than that of GaAs/Al0.4Ga0.6As.

Keywords

Heterojunction, First-principles, Electronic structure, Optical properties.

Citation

XIAOHUA YU, ZUDE JIN, HUIXIA SUN, Influence of GaAs/AlGaAs heterojunction on the photoemission properties of GaAs photocathode: a first-principles research, Optoelectronics and Advanced Materials - Rapid Communications, 17, 11-12, November-December 2023, pp.535-544 (2023).

Submitted at: May 30, 2023

Accepted at: Dec. 4, 2023