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Influence of doping on optical properties of ZnO nanofilms

D. K. MADHUP1,2,* , D. P. SUBEDI1, A. HUCZKO3

Affiliation

  1. Thin Film and Plasma Science Laboratory, Kathmandu University, Dhulikhel, Kavre, Nepal
  2. College of Biomedical Engineering and Applied Sciences, Hadigaun, Kathmandu, Nepal
  3. Department of Chemistry, Warsaw University, Warsaw, Poland

Abstract

Spectrophotometric analysis for optical properties of spray deposited undoped ZnO nanofilms and doped with Al, Cd and Co films have been made on glass substrate. The investigations revealed that doping Al (5 mol%) in ZnO (0.5 M) causes shifting of absorption edges in the transmittance to the lower wavelength. While doping Co (5 mol%) results the absorption edges in the transmittance spectra to the higher wavelength and lies around 447 nm. However, doping Cd (5 mol %) shows shift in absorption edge in very narrow range. Moreover, a change in refractive index of the film doped with Al, Cd, and Co is in accordance with the changes in band gap value in visible region. Furthermore, the variation in the ratio of free charge carrier to effective mass (N/m*) and plasma frequency (ωp) are found to increase with Al and Cd doping and decrease with Co doping in ZnO lattice. The oscillation energy E0, dispersion energy Ed, and other optical constants such as average oscillation wavelength λ0, oscillator strength S0, and lattice energy El have been determined using Wemple and Di-Domenico relation. With these results, intrinsic and extrinsic ZnO nanofilm have many applications in solar cell windows, LED with high quantum efficiency, thin film transistor and other optoelectronic devices. Decrease in bandwidth with Co and increase in bandwidth with Al are suitable for active and confining layer of heterostructure. Increase in lattice energy with Al, Cd, and Co doping increases the chemical stability and bond strength.

Keywords

Doping, ZnO, Optical constants.

Citation

D. K. MADHUP, D. P. SUBEDI, A. HUCZKO, Influence of doping on optical properties of ZnO nanofilms, Optoelectronics and Advanced Materials - Rapid Communications, 4, 10, October 2010, pp.1582-1586 (2010).

Submitted at: July 10, 2010

Accepted at: Oct. 14, 2010