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Influence of dopants on TiO2 thin films properties grown by pulsed laser deposition

C. SIMA1,*

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, Atomistilor 409, P.O. Box MG-36, Bucharest- Magurele, Romania

Abstract

The work investigated doped TiO2 thin films deposited by pulsed laser deposition method (PLD) on indium tin oxides (ITO) substrates. Titanium as target and nickel, zinc, palladium, aluminum, as dopants was used. The targets were irradiated by an Nd:YAG laser (355 nm, 5 ns, 35 mJ, 3 J/cm2) at 40 mTorr oxygen pressure and room temperature (RT). The films were subjected to a thermal treatment at 350 0C for two hours in oxygen atmosphere. The film structure, surface morphology, composition, thickness and optical transmission were investigated. Only titanium sub-oxides were formed at RT; after annealing, the films became crystalline, corresponding to anatase phase at low dopant concentrations excepting aluminum when anatase was obtained regardless of dopant concentration. The deposition rate of the films was around 0.0052 nm/pulse. On the surface, the films present droplets with size in the range of 0.2 μm to 3 μm. The best optical transmission in the visible range was found for the films doped with the highest nickel concentration..

Keywords

Titanium dioxide, dopants, Pulsed laser deposition.

Citation

C. SIMA, Influence of dopants on TiO2 thin films properties grown by pulsed laser deposition, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.136-140 (2012).

Submitted at: Dec. 14, 2011

Accepted at: Feb. 20, 2012