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Influence of carrier escape mechanism on the operating wavelength of InGaN/GaN multiple quantum well solar cells

SHITAO LIU1, FEIFEI WU1, QI YANG1, YUANDAN HE1, JIANLI ZHANG2, ZHIJUE QUAN2, HAIBIN HUANG3, LI WANG3,*

Affiliation

  1. School of Materials Science and Enginee ring, Nanchang University, Nanchang 330031, People s Republic of China
  2. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People s Republic of China
  3. Institute of Photovoltaics, Nanchang Universi ty, Nanchang 330031, People s Republic of China

Abstract

We fabricate d a series of InGaN/GaN multiple quantum well solar cells with indium content varying from 0.16 to 0.32 The emission wavelength s of the samples vary from 450 nm to 570 nm at forward current de nsity of 35A/cm 2 External q uantum efficiency measurement s indicate that the max imum operating wavelength of the series of solar cell s ends when the emission wavelengths approache 500 nm , though some of the samples have much longer absorption edges. To exp lain this phenomenon, we theor et ically analyze d the escape efficiency of photo generated carriers in the multiple quantum wells ( MQW). It was revealed that the carrier escape mechanism is the determining factor of maximum operating wavelength for high indi um content InGaN/GaN MQW solar cells..

Keywords

InGaN/GaN multiple quantum well, Solar cell, Carrier escape mechanism.

Citation

SHITAO LIU, FEIFEI WU, QI YANG, YUANDAN HE, JIANLI ZHANG, ZHIJUE QUAN, HAIBIN HUANG, LI WANG, Influence of carrier escape mechanism on the operating wavelength of InGaN/GaN multiple quantum well solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 11, 9-10, September-October 2017, pp.555-559 (2017).

Submitted at: Nov. 3, 2016

Accepted at: Oct. 10, 2017