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DAOHUA WU1,2, SHIJIN ZHONG1,2, MINGJUN HAN1,2, GUANGZHEN DAI1,*
Numerical calculations based on first-principles were applied to study the influence of band shift induced by different Al content on optoelectronic properties of wurtzite AlxGa1-xN materials. In this study, we construct the AlxGa1-xN structure by substitutional doping, where one Al atom replaces one Ga atom at different positions within the GaN structure. The results show that the doping of Al content makes the conduction band bottom of AlxGa1-xN band offset and little changes for the valence band top, which results in significant changing on optoelectronic properties of AlxGa1-xN. It is helpful to finding a new way to improve the light extraction efficiency, and providing more valuable information for materials and devices based on AlGaN.
GaN-based materials, First-principles, Optoelectronics properties.
DAOHUA WU, SHIJIN ZHONG, MINGJUN HAN, GUANGZHEN DAI, Influence of band shift induced by different Al content on optoelectronic properties of AlGaN materials, Optoelectronics and Advanced Materials - Rapid Communications, 18, 9-10, September-October 2024, pp.472-479 (2024).
Submitted at: March 22, 2024
Accepted at: Oct. 2, 2024
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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