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Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties

JIANFEI LI1,2, YUANJIE LV2, SHULAI HUANG3, ZIWU JI1,* , ZHIYONG PANG1, XIANGANG XU4

Affiliation

  1. School of Microelectronics, Shandong University, Jinan 250100, China
  2. Science and Technology on Application-Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  3. Science and Information College, Qingdao Agricultural University, Qingdao 266109, China
  4. Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

Abstract

AlN/GaN heterostructures, with different AlN barrier thicknesses (3 and 6 nm), are characterized using atomic force microscopy, high-resolution transmission electron microscopy, photoluminescence, and Hall effect measurements. Based on the measured results, we suggest that with increased AlN barrier thickness, the tensile strain in the AlN barrier layer is relaxed by crack channels. In addition, the strain-induced cracking also greatly penetrated into the GaN buffer layer, and resulted in the relaxation of the compressive strain and the increase of the defects in the GaN buffer layer. This caused AlN/GaN heterostructure quality deterioration and introduced additional scattering..

Keywords

Strain relaxation, Hall effect, Photoluminescence, Crack.

Citation

JIANFEI LI, YUANJIE LV, SHULAI HUANG, ZIWU JI, ZHIYONG PANG, XIANGANG XU, Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.184-188 (2017).

Submitted at: Sept. 23, 2015

Accepted at: April 6, 2017