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The quaternary of GaAsSbN capping layer (CL) and GaAsSb/GaAsN CL InAs/GaAs quantum dots (QDs) and the GaInNAs/GaAs quantum wells (QWs) VCSEL samples were grown by molecular beam epitaxy (MBE). Photoluminescence (PL) measurement was performed for InAs/GaAs QDs with two different CLs at low temperature, while PL was carried out for GaInNAs/GaAs QWs VCSELs at various temperatures. In addition, Integrated intensity of electroluminescence (EL) for the QWs VCSEL were measured under continuous-wave (CW) and pulsed conditions to reach emission wavelength at around wavelength of λ=1.28 μm for optoelectronics applications. Thus, a low temperature red shift was achieved using GaAsSbN CL and InAs/GaAs QD but in low intensity. In addition, amplification was observed by QWs devices at low temperature of T=77K..
VCSEL, InAs/GaAs QDs, GaInNAs QWs, Photoluminescence, Electroluminescence, MBE.
FATEN ADEL ISMAEL CHAQMAQCHEE, InAs/GaAs QDs and dilute nitride QWs VCSELs grown by molecular beam epitaxy, Optoelectronics and Advanced Materials - Rapid Communications, 10, 5-6, May-June 2016, pp.364-367 (2016).
Submitted at: June 25, 2015
Accepted at: June 9, 2016