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Improved surface carrier recombination and efficiency for selective emitter N-type solar cells with Al-alloyed rear junction

CHENG YI HSU1, BING LUN CAI2, CHIEN-HUNG WU2,* , YULI LIN1

Affiliation

  1. College of Engineering, Chung Hua University, Hsinchu, Taiwan, R.O.C
  2. Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, R.O.C

Abstract

In this paper, a fabrication process using well-arranged n+n/n++n front surface fields (FSFs) and a low temperature phosphosilicate glass (LTPSG) oxidation/etching for the emitter of n-type crystalline silicon solar cells is demonstrated. With an optimized phosphorus diffusion temperature of around 835oC and a 6-min LTPSG oxidation, an effective lifetime for minority charge carriers, as long as 285.94 s and a high efficiency of 19.2% under AM 1.5 were obtained. This improved cell performance is attributed to the enhanced collection efficiency of excitons from FSFs and a good surface passivation from the oxidation/etching process to reduce surface recombination velocity..

Keywords

Front surface field (FSF), Low temperature phosphosilicate glass (LTPSG), n+np+ solar cell.

Citation

CHENG YI HSU, BING LUN CAI, CHIEN-HUNG WU, YULI LIN, Improved surface carrier recombination and efficiency for selective emitter N-type solar cells with Al-alloyed rear junction, Optoelectronics and Advanced Materials - Rapid Communications, 11, 3-4, March-April 2017, pp.180-183 (2017).

Submitted at: June 3, 2016

Accepted at: April 6, 2017