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Improved anode material for orange-dye as organic semiconductor

SYED ABDUL MOIZ1,* , AHMAD NAIF M. ALAHMADI1, KHASAN S. KARIMOV2

Affiliation

  1. Department of Electrical Engineering, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah, Saudi Arabia
  2. Department of Electrical Engineering, GIK Institute, Topi, Swabi, Pakistan

Abstract

We investigated the metal semiconductor charge injection process to find the most suitable ohmic metal for Orange Dye (OD) as organic semiconductor. For this purpose, different metal semiconductor Schottky diodes such as (a) Au/OD/Al, (b) SnO2/OD/Al, (c) Ni/OD/Al, and (d) Ga/OD/Al were fabricated and electrically characterized. It is observed that all Schottky diodes follow space charge limited model to define their charge transport mechanism and at the same time Ga/OD interface offered best electrical response, while Ni/OD interface offered lowest electrical responses. As, aluminum electrode and all other fabrication parameters are same for all Schottky diodes, therefore it is inferred that the improved electrical response for Ga/OD/Al Schottky is mainly due to Ga OD interface. To compare, a simple relative charge injection efficiency parameter (with respect to Ga) is calculated as 70, 32, 30 and 100% for Au, SnO2, Ni, and Ga anode respectively. It is further observed that relative charge injection efficiency parameter is not a strong function of higher electric field.

Keywords

Organic semiconductor, Orange Dye, Space charge limited current, Relative charge injection efficiency.

Citation

SYED ABDUL MOIZ, AHMAD NAIF M. ALAHMADI, KHASAN S. KARIMOV, Improved anode material for orange-dye as organic semiconductor, Optoelectronics and Advanced Materials - Rapid Communications, 14, 1-2, January-February 2020, pp.61-65 (2020).

Submitted at: June 25, 2019

Accepted at: Feb. 17, 2020