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Improve d detectivity of uncooled InAs 0.06 Sb 0.94 photoconductors with long wavelength

Y. Z. GAO1,* , X. Y. GONG1, G. H. WU2, Y. B. FENG2, T. KOYAMA3, Y. HAYAKAWA3

Affiliation

  1. College of Electronics and Information Engineering, Tongji University, Shanghai 201804, Chin a
  2. Huaxing Infrared Device Company, Xian 712099, China
  3. Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu, Shizuoka 432-8011, Japan

Abstract

Uncooled InAs 0.06 Sb 0.94 and InAs 0.02 Sb 0.9 8 photoconductors with long wavelength were experimentally validated. Ge immersion lenses were set on the photoconductors. The detectors were fabricated using InAsSb epitaxial single crystals grown on InAs substrates by melt epitaxy (ME) technique. At room temperature, the spectral photoresponse showed that the peak detectivity D λp *at the wavelength of 5 m m reaches ≥ 5.0 × 10 9 cm Hz 1/2 W1 indicating the high sensitivity of the photoconductors. The detectivity D *of InAs 0.06 Sb 0.94 detectors is 1.3 × 10 9 and 2.8 × 10 8 cm Hz 1/2 W 1 at the wavelength of 8 and 9 mm respectively, which is one order of magnitude higher than that of InAs 0.02 Sb 0.9 8 detectors. The improvement of the sensitivity at 8 and 9 mm profits from the more arsenic composition in InAs 0.06 Sb 0.94 epilayers..

Keywords

InAsSb, Narrow bandgap, Single crystal, Spectral photoresponse.

Citation

Y. Z. GAO, X. Y. GONG, G. H. WU, Y. B. FENG, T. KOYAMA, Y. HAYAKAWA, Improve d detectivity of uncooled InAs 0.06 Sb 0.94 photoconductors with long wavelength, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1115-1118 (2014).

Submitted at: April 1, 2014

Accepted at: Nov. 13, 2014