"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Hole-doped manganites based tunneling junctions with isostructural barrier layer

Y. LIU1,2,* , Z. LIa1, Y. WANG2, H. YAN3

Affiliation

  1. College of Physics and Electronic Engineering, Taizhou University, Taizhou, Zhejiang 318000, China
  2. Department of Physics, Lanzhou University, Lanzhou, Gansu 730000, China
  3. Laboratory of Thin Film Materials, Beijing University of Technology, Beijing, Beijing 100022, China

Abstract

La0.7Sr0.3MnO3/La0.96Sr0.04MnO3/La0.7Sr0.3MnO3 magnetic tunnel junction device have been fabricated on SrTiO3 (STO) substrate. A large tunneling magnetoresistance (TMR) of 134% was observed from the junction with an antiferromagnetic insulating barrier layer (2 nm) at a temperature 4.2 K. Current-voltage (I-V) characteristic of the junction is consistent with a tunneling process at low temperature. A simulation based on Simmons’ tunneling model give a barrier-layer thickness d≈5 nm and an average barrier potential height Φ ≈0.1 eV, respectively. The results indicate that the large TMR is related to crystallographic similarity between La0.7Sr0.3MnO3 and La0.96Sr0.04MnO3 compounds, which should minimize lattice mismatch between the electrodes and the barrier layers.

Keywords

Magnetic tunnel junction, Tunneling magnetoresistance, Spin polarization< Manganite.

Citation

Y. LIU, Z. LIa, Y. WANG, H. YAN, Hole-doped manganites based tunneling junctions with isostructural barrier layer, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1246-1249 (2010).

Submitted at: July 30, 2010

Accepted at: Aug. 12, 2010