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M. K. BHAYANI1, A. J. PATEL1, SUNIL H. CHAKI1,* , A. R. JANI1
Single crystals of ZnSe were grown by chemical vapor transport (CVT) technique using iodine as transporting agent. The stoichiometric composition and the crystallographic lattice parameters of the as-grown crystals were determined by EDAX and XRD techniques respectively. The optical band gap of the as-grown single crystals was determined from optical absorption spectra obtained by optical spectroscopy. The thermal analysis of the crystals has been studied by the well known TGA and DTA techniques. The results obtained during the analysis showed the stability of ZnSe phase at higher temperatures. The surface microtopographic studies of the as-grown single crystals by the optical microscopy provided insight into the single crystal growth mechanism. The microtopography study showed that the crystals grow by layer mechanism via lateral spreading of layers. Also, kinks growth and striations were equally common features, suggesting higher under-cooling or minor fluctuations in temperature during single crystal growth.
ZnSe, Single crystal growth, Thermal properties, Microstructure.
M. K. BHAYANI, A. J. PATEL, SUNIL H. CHAKI, A. R. JANI, Growth, thermal and surface microtopographical studies of ZnSe single crystals, Optoelectronics and Advanced Materials - Rapid Communications, 3, 5, May 2009, pp.464-467 (2009).
Submitted at: April 6, 2009
Accepted at: May 25, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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