"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Growth of heteroepitaxial AgInSe2 layers on Si (100) substrates by hot wall method

D. PATHAK1,* , R. K. BEDI1, D. KAUR2

Affiliation

  1. Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar – 143005, India
  2. Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, India

Abstract

AgInSe2 films have been prepared onto the Si (100) substrate at 135oC by hot wall method at pressure of 10-5 m bar. Hot wall technique was used to prepare AgInSe2 films which work close to thermodynamic equilibrium and considered as most suitable for growth at low temperatures. The structural and optical properties of hot wall grown AgInSe2 films has been studied. X ray diffraction pattern indicate that the prepared films appear to be highly oriented in (400) direction suggesting epitaxial growth. The band gap calculated from reflectance data is found to be 1.36 and 2.11 eV which is assigned to the fundamental absorption edge and transition originating from crystal field splitting, respectively. The crystallite size of 99 nm has been obtained. Our result may be of interest for better understanding of epitaxial growth of chalcopyrite films at low temperature..

Keywords

Semiconductors, Optical properties of thin films, X-ray diffraction, Atomic force microscopy.

Citation

D. PATHAK, R. K. BEDI, D. KAUR, Growth of heteroepitaxial AgInSe2 layers on Si (100) substrates by hot wall method, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.657-661 (2010).

Submitted at: April 5, 2010

Accepted at: May 20, 2010