"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals

XUEFENG XIAO1,2,3,4,* , HUAN ZHANG1,2, HAICHENG WEI1,2, JIAYUE XU4,* , YAOQING CHU4, BOBO YANG4, XUEFENG ZHANG5

Affiliation

  1. Key Laboratory of Physics and Photoelectric Information Functional Materials Sciences and Technology, North Minzu University, Yinchuan, 750021, China
  2. College of Electric and Information Engineering, North Minzu University, Yinchuan, 750021, China
  3. School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
  4. School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201804, China
  5. Ningxia Ju Jing Yuan Crystal Technology Company Limited, Shizuishan 753000, China

Abstract

Doping with Tm3+ of 0.5mol%, 1.0mol%, 2.0mol% in the Bi4Si3O12 (BSO) crystals were grown by the modified vertical Bridgman method, respectively. The Bi4Si3O12:Tm(BSO:Tm) polycrystalline powders are prepared of using two step sintering method, namely sintered 12h at 800℃, cool to room temperature, after grinded, then sintered 8~12h at 850℃, used for crystal growth. The transmittance of Bi4Si3O12:Tm(BSO:Tm) crystals is about 80% and the optical quality of the crystal is same as the pure BSO crystal. The scintillation properties of BSO:Tm crystals are tested and analyzed. Pulse height measurements under γ-ray irradiation show that doping with 0.5 mol% Tm2O3 can increase the relative light yield of BSO from 5.0% to 5.2% of the CsI(Tl) crystal, consequently improving the ability to distinguish between particles. These results indicate that BSO:Tm crystals could be a promising candidate in some applications, such as electromagnetic and dual-readout calorimeters in nuclear or high energy physics.

Keywords

Bi4Si3O12 crystal, Crystal growth, Tm3+ ions, Scintillation characteristics, Relative light yield.

Citation

XUEFENG XIAO, HUAN ZHANG, HAICHENG WEI, JIAYUE XU, YAOQING CHU, BOBO YANG, XUEFENG ZHANG, Growth and scintillation properties of Tm3+ doped Bi4Si3O12 single crystals, Optoelectronics and Advanced Materials - Rapid Communications, 14, 7-8, July-August 2020, pp.367-371 (2020).

Submitted at: Dec. 12, 2019

Accepted at: Aug. 18, 2020