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Growth and morphology properties of bis (2-phenylethynyl) end-substituted oligothiophenes based thin films

C. VIDELOT-ACKERMANN1,* , A. K. DIALLO1, H. BRISSET1, F. FAGES1, F. SEREIN-SPIRAU2, J.-P. LÈRE-PORTE2, A. KUMAGAI3, N. YOSHIMOTO3

Affiliation

  1. Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UPR CNRS 3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, France
  2. Equipe Architectures Moléculaires et Matériaux Nanostructurés, UMR CNRS 5253, Institut Charles Gerhardt, Ecole Nationale Supérieure de Chimie de Montpellier, 8 rue de l’Ecole Normale, 34293 Montpelli
  3. Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan

Abstract

Growth mechanism of bis(2-phenylethynyl) end-substituted oligothiophenes (diPhAc-nTs, n = 2, 3) based organic thin films deposited by high vacuum deposition on Si/SiO2 substrates have been investigated. Especially the influence of acetylenic (-cers in thiophene-phenylene derivatives on the growth process was studied in details. While olefinic containing oligomers, distyryl-oligothiophenes (DSnTs) show a Stranski-Krastanov mechanism, dependence of thin film morphology on thickness and substrate temperature by atomic force miscrocopy (AFM) reveals a Volmer-Weber mechanism in diPhAc-nTs. These results underline the importance of molecular structure on growth mechanism and resulting thin film morphology for future electronic applications such as charge transport in organic thin film transistors (OTFTs).

Keywords

Organic semiconductor, Thin film, Morphology, AFM, Growth mechanism.

Citation

C. VIDELOT-ACKERMANN, A. K. DIALLO, H. BRISSET, F. FAGES, F. SEREIN-SPIRAU, J.-P. LÈRE-PORTE, A. KUMAGAI, N. YOSHIMOTO, Growth and morphology properties of bis (2-phenylethynyl) end-substituted oligothiophenes based thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.699-704 (2010).

Submitted at: April 20, 2010

Accepted at: May 20, 2010