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Growth and investigations of GaN-Ga2O3 nano-composites

K. P. BEH1,* , F. K. YAM1, L. L. LOW1, S. S. TNEH1, S. W. NG1, L. K. TAN1, Y. Q. CHAI1, Z. HASSAN1

Affiliation

  1. Nano-optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang, Malaysia

Abstract

Gallium nitride (GaN) – gallium oxide (Ga2O3) nano-composites were synthesized through ammonolysis of Ga2O3 powder, with or without the addition of multi-wall carbon nanotubes (MWCNT). Both synthesized nano-composites having rod-shaped structure, while addition of MWCNT had resulted in hollow-like interior with some cavity walls. Vibrational measurement revealed that both samples contained mixture of GaN-Ga2O3, with GaN being the dominant. Optical measurements showed a high level of defects present in both samples. Violet-blue bands (VBL) were observed in both samples. Sample with added MWCNT exhibited blue shift relative to that of without MWCNT, which properties may governed by the contents of nitrogen..

Keywords

GaN, Ga2O3, composites, Carbon nanotubes, PL, Raman.

Citation

K. P. BEH, F. K. YAM, L. L. LOW, S. S. TNEH, S. W. NG, L. K. TAN, Y. Q. CHAI, Z. HASSAN, Growth and investigations of GaN-Ga2O3 nano-composites, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1015-1018 (2012).

Submitted at: July 12, 2012

Accepted at: Oct. 30, 2012