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B. N. JOSHI1, A. M. MAHAJAN1,*
The HF acid has been used as a catalyst with TEOS, ethanol and water, to deposit porous SiO2 dielectric thin films by spin coating technique. The effects of HF catalyst concentration on properties of deposited thin films have been studied using different characterization techniques. The films have been characterized with the FTIR spectrometer, the stretching Si-O-Si peak at 1074 cm-1 and the other vibrational peak positions of the absorption spectrum confirms the deposition of SiO2 thin film. The FWHM of the Si-O-Si stretching peak found to be increasing with corresponding increase in broadness in Si-O-Si peak ensures the presence of porosity in the film. The refracive index (RI) of a deposited film measured using ellipsometer is 1.33 and the thickness of film is of 2500 A0. The porosity calculated from the RI is 27.4 % and dielectric constant determined to be of 3.1. The presence of nanopores in the films have been revealed from SEM image. The presence of such nanopores lead to diminishing of the dielectric constant, that makes these films suitable to be used as an interlayer dielectric in ULSI applications.
Interlayer dielectrics, HF catalyst, nanopores, Porous SiO2 ,low dielectric constant.
B. N. JOSHI, A. M. MAHAJAN, Growth and characterization of porous SiO2 thin films for interlayer dielectrics applications in ULSI, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.659-662 (2007).
Submitted at: Oct. 24, 2007
Accepted at: Nov. 27, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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