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Growth and characterization of Ga-doped ZnO thin films deposited by sol-gel dip-coating method

MIN SU KIM1, SOARAM KIM1, HYONKWANG CHOI1, JAE YOUNG LEEM2,* , HYUNGGIL PARK2, GIWOONG NAM2, HYUNSIK YOON2, BYUNGGU KIM2, SANG HEON LEE3, JAE HAK JUNG3

Affiliation

  1. Department of Nano Systems Engineering, Inje University, Gimhae 621 749 , Republic of Korea
  2. Department of Nano Science and Engineering, Inje University, Gimhae 621749, Republic of Korea
  3. School of Chemical Engineering, Yeungnam University, Gyeongsan 712749, Republic of Korea

Abstract

Ga doped ZnO (GZO) thin films were deposited on quartz substrates using a sol gel dip coating method. The structural and optical properties of the resulting GZO thin films with various Ga concentrations were investigated using scanning electron microscopy, X-ray diffraction, UV visible spectroscopy, and photoluminescence. The GZO thin films exhibited rough surfaces with a particle like structure. An increas e in Ga concentration gave rise to slightly decreased particle sizes but did not change the surface morphology of the thin films. From all GZO thin films, the optical transmittance in the visible region was over 80%, where in the case of the undoped ZnO thin films, three emission peaks could be observed in the UV and visible region. With an increase in the Ga concentration, the intensity of the UV emission peak increased while the intensity of the red emission peak decreased..

Keywords

Zinc oxide, Gallium, Thin film, Sol-gel, Dip-coating.

Citation

MIN SU KIM, SOARAM KIM, HYONKWANG CHOI, JAE YOUNG LEEM, HYUNGGIL PARK, GIWOONG NAM, HYUNSIK YOON, BYUNGGU KIM, SANG HEON LEE, JAE HAK JUNG, Growth and characterization of Ga-doped ZnO thin films deposited by sol-gel dip-coating method, Optoelectronics and Advanced Materials - Rapid Communications, 9, 3-4, March-April 2015, pp.451-454 (2015).

Submitted at: Dec. 4, 2013

Accepted at: March 19, 2015