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Growth and characterization of dyes doped TGS Crystals for IR detector applications

D. NARAYANASAMY1, P. KUMARESAN2,* , P. M.ANBARASAN3

Affiliation

  1. Department of Physics, SKP Institute of Technology, Tiruvannamamalai, Tamil Nadu, India
  2. Department of Physics, Thiru. A. Govindasamy Government Arts College, Tindivanam-604 002, Tamil Nadu, India
  3. Department of Physics, Periyar University, Salem-636 011, Tamil Nadu, India

Abstract

Magnetic stirrer was used to prepare saturated solution. All crystals were grown by slow evaporation process. The FTIR spectra of all grown crystals have been recorded in the range of 400 - 4000 cm–1 using Bruker FT-IR 8400 spectrophotometer by KBr pellet technique. To determine the lattice parameters, powder X-ray diffraction analysis was performed by Philips X’pert PRO X-ray diffractometer system with Cu-Kα (λ = 1.54178Å) radiation at room temperature (25˚C) with an operating voltage 40 kV and the tube current was 30 mA. In the present work, optical transmission and absorption spectra were recorded by Systronics UV-Double beam spectrometer in the wavelength range 190 to 1100 nm..

Keywords

TGS Crystals, Solubility, UV-Visible studies, FT-IR Studies, Ferro electric properties.

Citation

D. NARAYANASAMY, P. KUMARESAN, P. M.ANBARASAN, Growth and characterization of dyes doped TGS Crystals for IR detector applications, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1411-1414 (2015).

Submitted at: Sept. 2, 2014

Accepted at: Oct. 28, 2015