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The paper deals with the numerical investigation of melt flows during multi-crystalline silicon growth by the directional solidification method. 2D global simulation of heat transfer was performed using finite volume technique. Thermal and fluid flow fields were investigated in the silicon melt. Also, impurities distribution such as oxygen, carbon mass fraction in the molten silicon are simulated. The diffusion process in the melt was taken into account in the computations. The obtained numerical results provide a basic understanding of the heat transfer characteristics during directional solidification of mc-silicon growth..
Silicon, Heat transfer, Simulation, Directional solidification, Solar cell.
M. SRINIVASAN, P. RAMASAMY, Global simulation modelling on impurities of multi-crystalline silicon growth process by directional solidification method for PV applications, Optoelectronics and Advanced Materials - Rapid Communications, 10, 5-6, May-June 2016, pp.385-390 (2016).
Submitted at: April 13, 2015
Accepted at: June 9, 2016