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Generation of ultrafast dark pulse based on non-degenerate two-photon absorption in silicon nanophotonic chip

JIANWEI WU1,2,* , FENGGUANG LUO1,2, ZHIHUA YU1,2, QING TAO1,2

Affiliation

  1. College of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P.R. China
  2. Wuhan National Laboratory for Optoelectronics,Wuhan 430074, P.R. China

Abstract

A novel project has been proposed and demonstrated for generating the ultrafast dark pulse by utilizing the non-degenerate two-photon absorption (TPA) in silicon-on-insulator (SOI) nanophotonic chip, in which by a pump bright pulse with pulsewidth of 100fs at 1/e intensity point and continue wave (CW) co-propagating along the SOI waveguide, an ultrafast dark pulse at CW wavelength can be achieved at the end of waveguide. Investigation results show that the pulsewidth and contrast of dark pulse are strongly dependent on the pump initial power and waveguide length.

Keywords

Integrated optics, Silicon-on-insulator technology, Non-degenerate TPA process, Pulse generation.

Citation

JIANWEI WU, FENGGUANG LUO, ZHIHUA YU, QING TAO, Generation of ultrafast dark pulse based on non-degenerate two-photon absorption in silicon nanophotonic chip, Optoelectronics and Advanced Materials - Rapid Communications, 2, 8, August 2008, pp.466-469 (2008).

Submitted at: June 1, 2008

Accepted at: July 16, 2008