"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Gain evaluation of Silica based Thulium doped fibre amplifier with triple pump 1050 nm+1400 nm+800 nm configuration for different values of doping concentration and doping radius

RAJANDEEP SINGH1,* , MANINDER LAL SINGH2,*

Affiliation

  1. Department of ECE GNDU RC, Fattu Dhinga (Sultanpur Lodhi), India
  2. Department of Electronics Technology, GNDU Amritsar, India

Abstract

In this paper the gain of Silica based Thulium doped fibre amplifier (TDFA) for different values of doping concentrations and doping radius has evaluated. The considered doping radius range is from 0.3 μm to 1.3 μm with an increment of 0.2 μm and the doping concentration range is from 20ppm to 140ppn with an increment of 20 ppm. In all considered cases, the best and almost similar performance has been achieved for 20ppm doping concentration with 0.9μm doping radius and for 60 ppm doping concentration with 0.5μm doping radius. The gain as high as 17.71dB has been obtained at 1470nm for 60 ppm doping concentration and 0.5μm doping radius..

Keywords

S-Band, TDFA, Silica, Gain, Doping concentration, Doping radius.

Citation

RAJANDEEP SINGH, MANINDER LAL SINGH, Gain evaluation of Silica based Thulium doped fibre amplifier with triple pump 1050 nm+1400 nm+800 nm configuration for different values of doping concentration and doping radius, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.619-623 (2016).

Submitted at: Feb. 28, 2016

Accepted at: Sept. 29, 2016