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J. M. TORRES PEREIRA1,*
This paper presents in detail the computed results regarding the effect of the absorption layer width, bias voltage, temperature, wavelength and direction of the incident light on the transit time limited frequency response of photodiodes for optical communications. The simulation model is quite general and may be applied to photodiodes with an arbitrary electric field profile and non-uniform illumination. The results were obtained for p-i-n structures with an absorption layer of In0.53Ga0.47As and they show that better bandwidths may be obtained for shorter devices, lower temperature and, when the light incident on the p+ side, for shorter wavelengths.
Modelling, Frequency response, Photodiode, P-i-n, Temperature.
J. M. TORRES PEREIRA, Frequency response analysis of photodiodes for optical communications, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.916-921 (2010).
Submitted at: May 27, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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