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R. KAPLAN1,* , B. KAPLAN1
In-phase and in-quadrature frequency-resolved photocurrent (IP-FRPC and IQ-FRPC) measurements in amorphous (a-) As2Se3Te thin films are reported as a function of excitation light intensity, wavelength, and applied dc electric field at room temperature. These measurements provide the carrier lifetime distributions directly. The lifetime of a-As2Se3Te is found to be strongly dependent on excitation light intensity, but to be independent of applied electric field. This is explained in terms of additional gap states which act as recombination centers. We also present the exponent π in the power-low relationship, πΌπββ πΊπ, between light generation flux and photocurrent at different frequencies and wavelengths. The exponent π is compared for IP-FRPC and IQ-FRPC outputs, and different materials, which supply information about recombination kinetics. We also discuss the results in terms of photocurrent models proposed.
a-As2Se3Te thin films, IP-FRPC and IQ-FRPC responses, Photocarrier lifetime, Intensity dependence.
R. KAPLAN, B. KAPLAN, Frequency-resolved photoconductivity in a-As2Se3Te, Optoelectronics and Advanced Materials - Rapid Communications, 14, 11-12, November-December 2020, pp.521-527 (2020).
Submitted at: July 3, 2020
Accepted at: Nov. 25, 2020
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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