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Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures

İ. TAŞÇIOĞLU1, H. USLU1, Y. ŞAFAK1, E. ÖZBAY2

Affiliation

  1. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey
  2. Nanotechnology Research Center, Department of Physics, Bilkent University, 06800 Ankara, Turkey

Abstract

The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series resistances (Rs), depletion layer width (WD) and interface state densities (NSS) of (Ni/Au)/AlGaN/AlN/GaN heterostructures have been extracted from the current-voltage (I-V) at room temperature, and frequency dependent capacitance voltage (C-V) and conductancevoltage (G/w-V) measurements. The high value of n and Rs were attributed to the existence of an interfacial layer (IL) and particular distribution of Nss. The density distrubition profile of Nss was obtained from both forward bias I-V data and low-high frequency (CLF-CHF) measurement methods. In addition, the voltage dependent Rs profile obtained both I-V and admittance measurements are in good agreement. As a result, the existence of an IL, Rs and Nss lead to deviation from the ideal case of these heterostructures.

Keywords

(Ni/Au)/AlGaN/AlN/GaN, C-V-f and G/w-V-f measurements, Interface states, Rs.

Citation

İ. TAŞÇIOĞLU, H. USLU, Y. ŞAFAK, E. ÖZBAY, Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures, Optoelectronics and Advanced Materials - Rapid Communications, 4, 6, June 2010, pp.859-862 (2010).

Submitted at: March 1, 2010

Accepted at: June 16, 2010