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R. KUMAR1,* , N. THAKUR1
SiO2 nanowires in groups have been grown on silicon substrate by annealing SiO particles on Si substrate. The formation of nanowires has been observed trough solid-liquid-solid (SLS) mechanism. Initially using SiO on Si substrate SiO2 nanowires were grown in groups using annealing method. These SiO2 nanowires were etched from Si substrate using HF solution and the same Si substrate was used for second annealing without using SiO particles; again in second annealing SiO2 nanowires have been grown. It has been observed once the nanowires are nucleated on Si substrate no supply of any precursor is necessary for the further growth of SiO2 nanowire on Si substrate. The observed pits on the Si substrate indicate that SLS mechanism is involved in the formation of nanowires.
Nanowire; SiO2, Si substrate, Annealing temperature.
R. KUMAR, N. THAKUR, Formation and characterization of SiO2 nanowire groups on Si substrate by SLS mechanism, Optoelectronics and Advanced Materials - Rapid Communications, 3, 4, April 2009, pp.343-346 (2009).
Submitted at: March 4, 2009
Accepted at: April 23, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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