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A. DRAGULINESCU1,* , L. LIZARRAGA2, S. MIR2, G. SICARD2
Very little literature is today available describing defects and failure mechanisms in a photodiode. The study of defects is very important, as they can significantly reduce the performances of the photodiode. The reason for the lack of data in this field is the fact that the defects, that increase the dark current and reduce the photogenerated current, are not understood well enough to enable the development of a general model. In this paper we performed an analysis of the defects and failure mechanisms in the photodiode, pointing out their characteristics and their influence on the parameters of the photodiode (photogenerated current, dark current).
CMOS photodiode, Defect and failure mechanisms, T-CAD tools.
A. DRAGULINESCU, L. LIZARRAGA, S. MIR, G. SICARD, Fault mechanisms in a CMOS N-diffusion photodiode, Optoelectronics and Advanced Materials - Rapid Communications, 1, 4, April 2007, pp.166-170 (2007).
Submitted at: Feb. 1, 2007
Accepted at: March 14, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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