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Far infrared properties of PbTe doped with Hg

P. M. NIKOLIĆ1,* , S. S. VUJATOVIĆ1, K. M. PARASKEVOPOULOS2, E. PAVLIDOU2, T. T. ZORBA2, T. IVETIĆ1, O. CVETKOVIĆ3, O. S. ALEKSIĆ4, V. BLAGOJEVIĆ5, M. VESNA NIKOLIĆ4

Affiliation

  1. Institute of Technical Sciences of SASA, Knez Mihailova 35/IV, 11000 Belgrade, Serbia
  2. Physics Department, Solid State Section, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
  3. IchTM, Center of Chemistry, Studentski Trg 12, 11000 Belgrade, Serbia
  4. Institute for Multidisciplinary Research, Kneza Višeslava 1, 11000 Belgrade, Serbia
  5. Faculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia

Abstract

Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg..

Keywords

PbTe, Infrared, Ag-doping, Hg-doping.

Citation

P. M. NIKOLIĆ, S. S. VUJATOVIĆ, K. M. PARASKEVOPOULOS, E. PAVLIDOU, T. T. ZORBA, T. IVETIĆ, O. CVETKOVIĆ, O. S. ALEKSIĆ, V. BLAGOJEVIĆ, M. VESNA NIKOLIĆ, Far infrared properties of PbTe doped with Hg, Optoelectronics and Advanced Materials - Rapid Communications, 4, 2, February 2010, pp.151-153 (2010).

Submitted at: Jan. 12, 2010

Accepted at: Feb. 2, 2010