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R. S. DUBEY1,* , L. S. PATIL1, J. P. BANGE1, D. K. GAUTAM1
Presently, one-dimensional photonic crystal by using porous silicon layers has been preferred because of its easy fabrication method by electrochemical etching. In this paper, the electrochemical etching of boron doped silicon wafer of <100> orientation has been done in ethanolic solution containing aqueous hydrofluoric acid. The porous silicon layered structures have been studied by using FTIR, XRD and SEM. The XRD spectras reveals that the porous silicon has the same orientation that of the bulk silicon as the etching process does not change its orientation. The silicon and oxygen bonding produces prominent absorbance band as shown in IR spectras, it is analyzed that the antisymmetric stretching peak of Si-O-Si bond is present in the porous silicon structures. The surface morphology analysis by SEM, demonstrates the first and second layer thicknesses are 1.36 μm and 0.56 μm of sample PSL1 and 1.84 μm and 0.72 μm of sample PSL2.
Photonic crystals, Porous silicon layers, Porosity, Electrochemical etching.
R. S. DUBEY, L. S. PATIL, J. P. BANGE, D. K. GAUTAM, Fabrication of one-dimensional photonic crystals using porous silicon layers, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.655-658 (2007).
Submitted at: Nov. 22, 2007
Accepted at: Nov. 27, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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