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Fabrication of nitride based UV LEDs with low dislocation GaN buffer layers

K. F. YARN1, W. J. LUO2, I. T. HSIEH3, W. C. CHANG3,*

Affiliation

  1. Department of Electronic Engineering, Far East University, Tainan, Taiwan 744, ROC
  2. Department of Refrigeration, Air Conditioning and Energy Engineering, National Chin-Yi University of Technology, Taichung, Taiwan 411, ROC
  3. Department of Electronic Engineering, Southern Taiwan University, Taiwan 710, ROC

Abstract

We have studied Al x Ga 1 x N superlattice epilayers which are grown around the Al y Ga In) 1 y N active layer and their effects on the characteristics of UV (ultra violet) LEDs. This n ew MOCVD grown UV LEDs using low dislocation density GaN buffer layers on sapphire have been investigat ed. Characteristics of t wo different GaN LED sub strates, i.e. 5 μ m thick and 20 μ m thick buffer layers, on sapphire are compared with each other. E nhanced LED characteristics show ~29.5% reduction in current voltage resistance, ~8.5% reduction in turn on voltage and output power saturation at higher current. The b etter GaN buffer quality results in the lower defect density and the heat dissipation which are believed to the enhanced reason s ..

Keywords

Ultra-violet (UV), Gallium nitride (GaN), Metalorganic chemical vapor deposition (MOCVD).

Citation

K. F. YARN, W. J. LUO, I. T. HSIEH, W. C. CHANG, Fabrication of nitride based UV LEDs with low dislocation GaN buffer layers, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.785-787 (2012).

Submitted at: April 14, 2012

Accepted at: Sept. 20, 2012