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Fabrication and electrical characterization of the surfacetype Au/NiPc/Ag diode

M. SHAH1,* , M. H. SAYYAD1, KH. S. KARIMOV1,2, M. MAHROOF-TAHIR3

Affiliation

  1. Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi-23640, District Swabi, NWFP, Pakistan
  2. Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe, 734025, Tajikistan
  3. St.Cloud State University , 720 Fourth Avenue South St.Cloud, MN 56301-4498, USA

Abstract

This paper reports on the fabrication and investigation of nickel phthalocyanine (NiPc) thin film based surface-type device. In this device thin film of NiPc of thickness 170 nm is thermally sublimed on glass substrate with preliminary deposited silver and gold electrodes to form the surface-type Au/NiPc/Ag Schottky diode. The dark current-voltage characteristics are investigated at room temperature. The barrier height is calculated from the I-V curve and is found equal to 1.11eV. The value of mobility and conductivity is calculated as 9.3´10-9cm2V -1S-1 and 3.42 10 7 1cm 1 ´ - W- - , respectively. It is observed that at low voltages the device shows ohmic conduction and at higher voltages the conduction mechanisms are dominated by space charge limited current.

Keywords

Schottky diode, NiPc thin films, Organic semiconductor, Mobility.

Citation

M. SHAH, M. H. SAYYAD, KH. S. KARIMOV, M. MAHROOF-TAHIR, Fabrication and electrical characterization of the surfacetype Au/NiPc/Ag diode, Optoelectronics and Advanced Materials - Rapid Communications, 3, 8, August 2009, pp.831-834 (2009).

Submitted at: June 6, 2009

Accepted at: July 31, 2009