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K. R. RAM VICTORIA1,* , S. VASUKI1
This article reports the fabrication and electrical properties of RF sputtered Zinc oxide (ZnO) thin film based staggered bottom gate phototransistors. XRD, AFM, SEM and optical measurements are carried out for the studying the surface morphological, optical as well as structural quality of the deposited thin films. The RF sputtered ZnO thin films are normal to the substrate oriented along the c-axis and exhibit high absorption in the ultraviolet (UV) region. The Thin-Film Transistor (TFT) presented in this work employs sputtered ZnO film as the active channel layer. The proposed enhancement mode device exhibits threshold voltage, channel mobility, and on-off ratio of 4.8V, 5.2 cm2/V.s, and 106 respectively. The potential of the device in UV detection application was tested subsequently using an optical power source of 2.3 W/cm 2. The device output current (drain to source current: IDS) increased dramatically with UV illumination and the illumination-to-dark current ratio evaluated to be greater than 4 proving the possibility of the device to stand as a potential candidate in UV photodetection applications.
ZnO thin films, RF Sputtering, Thin-film Transistors, Phototransistor, Electrical Properties, UV sensor.
K. R. RAM VICTORIA, S. VASUKI, Fabrication and characterization of RF sputtered ZnO thin film based phototransistors for UV detection applications, Optoelectronics and Advanced Materials - Rapid Communications, 15, 7-8, July-August 2021, pp.341-347 (2021).
Submitted at: Feb. 22, 2021
Accepted at: Aug. 16, 2021
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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