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Fabrication and characterization of metal to insulator phase transition thin films

HUIQUN ZHU1,2, YI LI1,3,* , GUOXIANG TONG1, BAOYING FANG1, XIAOHUA WANG1

Affiliation

  1. College of Optical Electrical and Computer Engineering, University of Shanghai for Science and Techn ology, Shanghai 200093 People’s Republic of China
  2. College of Applied Physics and Materials, Wuyi University, Jiangmen 529020 People’s Republic of China
  3. Shanghai Key Laboratory of Modern Optical System, Shanghai 200093 People’s Republic of China

Abstract

VO2 thin films were successfully fabricated on glass substrates by magnetron sputtering at room temperature and thermal oxidation in the air. The structures, compositions, and optical properties of the films were characterized. Raman scattering and X-ray photoelectron spectroscopy demonstrated that the films were mostly composed of VO2. X-ray diffraction and scanning electron microscopy patterns showed the relation between crystal structures and thermal oxidation. The optical measurement results showed the infrared transmittance variation of the film was above 50 % at 2500 nm, and the width of the thermal-hysteresis loop of the film was about 8 oC. The VO2 thin films presented a good characterization from metal to insulator phase transition..

Keywords

Vanadium dioxide, Sputtering, Oxidation, Phase transition.

Citation

HUIQUN ZHU, YI LI, GUOXIANG TONG, BAOYING FANG, XIAOHUA WANG, Fabrication and characterization of metal to insulator phase transition thin films, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.1015-1020 (2013).

Submitted at: June 24, 2012

Accepted at: Nov. 7, 2013