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Excitons properties in CdSe/CdxZn1-xS core/shell quantum dots

GUOZHI JIA1,* , YUNFENG WANG2, JIANGHONG YAO2

Affiliation

  1. Tianjin Institute of Urban Construction, Tianjin 300384, China
  2. The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China

Abstract

Using the effective-mass approximation method, the electronic structures of CdSe/CdxZn1-xS core/shell quantum dots are investigated systematically. The Coulomb interaction between the electron and hole is also taken into account. The calculated results shown that the electron and hole can be strongly confined in the core for the CdSe/CdxZn1-xS type-Ⅰheterostructure, which can mainly be ascribed to the large valence and conduction band offset between CdSe and CdxZn1-xS. The lattice mismatch between core and shell layer can easily be implemented by adjusting the molar ratio of Cd in the shell layer. The transition energies can be widely tuned by the changing the structure parameters.

Keywords

Exciton, Quantum dot, CdSe/Cd-Zn-S.

Citation

GUOZHI JIA, YUNFENG WANG, JIANGHONG YAO, Excitons properties in CdSe/CdxZn1-xS core/shell quantum dots, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2080-2084 (2010).

Submitted at: Oct. 20, 2010

Accepted at: Nov. 29, 2010