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Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature

YUDE SHEN1, YAWEI LI1,* , JINZHONG ZHANG1, XIA ZHU1, ZHIGAO HU1, JUNHAO CHU1,2

Affiliation

  1. Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai, 200241, People’s Republic of China
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China

Abstract

Al2O3 thin films were deposited at room temperature by atomic layer deposition (ALD) method with trimethylaluminum and ozone. The deposition velocity can be improved two orders of magnitude with the using of O3 instead of H2O. The Al2O3 films surface are atomically sm ooth. It was found that there are much less defects density in the O3 based Al2O3 film than H2O based one. The O3 based Al2O3 film shows excellent insulating behavior and the breakdown field is about 7 MV/cm. These results prove the superior quality of the O3 based film, which is suitable for microelectronic devices..

Keywords

Al2O3 thin films Atomic layer deposition Insulating behavior Breakdown field.

Citation

YUDE SHEN, YAWEI LI, JINZHONG ZHANG, XIA ZHU, ZHIGAO HU, JUNHAO CHU, Excellent insulating behavior Al2O3 thin films grown by atomic layer deposition efficiently at room temperature, Optoelectronics and Advanced Materials - Rapid Communications, 6, 5-6, May-June 2012, pp.618-622 (2012).

Submitted at: April 7, 2012

Accepted at: June 6, 2012