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Evolution of V-defects and dislocations in InGaN/GaN multi-quantum wells observed by transmission electron microscopy

HUANYOU WANG1,2,* , GUI JIN1,2, QIAOLAI TAN1,3

Affiliation

  1. Academy of Electronic Information and Electrical Engineering, Xiangnan University Chenzhou, China
  2. School of Information and Optoelectronics Science and Technology, South China Normal University, Guangzhou, China
  3. Institute of Physics and Information Science, Hunan Normal University, Changsha, China

Abstract

InGaN/GaN multi-quantum well (MQW) structures have been grown on a (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The origin and evolution of three special V-defects and dislocations are investigated using cross-sectional transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS). Some (a+c) dislocations decompose inside the MQW, resulting in a misfit segment in the c-plane and a V-defect. Some V-defects are generated from the stacking mismatch boundaries induced by stacking faults that are formed within the MQW owing to the strain relaxation. Some V-defects in the MWQ have a thin six-walled structure with InGaN/GaN 10 11 layers, which is related to the growth kinetics of the GaN crystal and a masking effect of In atoms segregated around the threading dislocation..

Keywords

Metal-organic chemical vapor deposition (MOCVD), Patterned sapphire Substrate, Optical emission, Lateral growth.

Citation

HUANYOU WANG, GUI JIN, QIAOLAI TAN, Evolution of V-defects and dislocations in InGaN/GaN multi-quantum wells observed by transmission electron microscopy, Optoelectronics and Advanced Materials - Rapid Communications, 12, 11-12, November-December 2018, pp.732-736 (2018).

Submitted at: Sept. 15, 2017

Accepted at: Nov. 29, 2018